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Research Project: high-k: Dielectric Material for MOS Gate Dielectrics
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2010

Hasper, A. and Snijders, G.J. and Vandezande, L. and De Blank, M.J. and Bankras, R.G. (2010) Deposition of TiN films in a batch reactor. Patent US7732350 (Assigned).

2006

Bankras, R.G. (2006) In-situ RHEED and characterization of ALD Al2O3 gate dielectrics PhD thesis, University of Twente. ISBN 90-365-2271-4
Bankras, R.G. and Holleman, J. and Schmitz, J. and Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. (2006) In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. Chemical Vapor Deposition, 12 (5). pp. 275-280. ISSN 0948-1907 *** ISI Impact 1,789 ***
Bankras, R.G. and Tiggelman, M.P.J. and Negara, M.A. and Sasse, G.T. and Schmitz, J. (2006) C-V Test Structures for Metal Gate CMOS. In: Proceedings of the International Conference on Microelectronic Test Structures (ICMTS), 6-9 Mar 2006, Austin, Texas. pp. 226-229. Electron Devices Society. IEEE. ISBN 1-4244-0167-4
Hasper, A. and Snijders, G.J. and Vandezande, L. and De Blank, M.J. and Bankras, R.G. (2006) Deposition of TiN films in a batch reactor. Patent US20060634043 (Application).
Kovalgin, A.Y. and Zinine, A.I. and Bankras, R.G. and Wormeester, H. and Poelsema, B. and Schmitz, J. (2006) On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In: Proceedings of the Electrochemical Society, 29 okt - 3 nov 2006, Cancun, Mexico. pp. 191-202. ECS Transactions 3 (2). Electrochemical Society. ISSN 1938-5862 ISBN 1-56677-502-7

2005

Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) In-Situ RHEED analysis of atomic layer deposition. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands. pp. 70-75. Technology Foundation STW. ISBN 90-73461-50-2
Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80. pp. 78-81. ISSN 0167-9317 *** ISI Impact 1,277 ***
Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Imaging of oxide charges and contact potential difference fluctuations in Atomic Layer Deposited Al2O3 on Si Journal of applied physics, 97. 063709. ISSN 0021-8979 *** ISI Impact 2,101 ***
Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties. Journal of Applied Physics, 98 (7). pp. 076104-1. ISSN 0021-8979 *** ISI Impact 2,101 ***
Tiggelman, M.P.J. (2005) Low series resistance structures for gate dielectrics with a high leakage current. Master's thesis, University of Twente.

2003

Bankras, R.G. and Aarnink, A.A.I. and Holleman, J. and Schmitz, J. (2003) In-situ RHEED analysis of atomic layer deposition and characterization of Al203 gate dielectrics In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 726-729. Technology Foundation STW. ISBN 90-73461-39-1

2002

Bankras, R.G. and Holleman, J. and Woerlee, P.H. (2002) Characterization of pulsed laser deposited Al2O3 gate dielectric In: Proceedings of the 5th annual workshop on semiconductors advances for future electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 1-4. Technology Foundation STW. ISBN 90-73461-33-2