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Research Project: Resilience for Automotive
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2012

Herfst, R.W. and Steeneken, P.G. and Tiggelman, M.P.J. and Stulemeijer, J. and Schmitz, J. (2012) Fast RF-CV characterization through High-Speed 1-port S-Parameter measurements. IEEE transactions on semiconductor manufacturing, 25 (3). pp. 310-316. ISSN 0894-6507 *** ISI Impact 1,045 ***

2011

Herfst, R.W. and Schmitz, J. and Scholten, A.J. (2011) Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements. In: IEEE International Reliability Physics Symposium, IRPS 2011, 10-14 Apr 2011, Monterey, CA, USA. XT.6.1 -XT.6.4. IEEE Reliability Society. ISSN 1541-7026 ISBN 978-1-4244-9113-1

2010

van Dijk, K. and Volf, P. and Detcheverry, C. and Yau, A. and Ngan, P. and Liang, Z. and Kuper, F.G. (2010) Validating foundry technologies for extended mission profiles. In: Proceedings of IEEE International Reliability Physics Symposium 2010 (IRPS), 2-6 May 2010, Anaheim, CA, USA. pp. 111-116. IEEE Computer Society. ISBN 978-1-4244-5430-3
Herfst, R.W. and Steeneken, P.G. and Tiggelman, M.P.J. and Stulemeijer, J. and Schmitz, J. (2010) Fast RF-CV characterization through high-speed 1-port S-parameter measurements. In: Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010, 22-25 Mar 2010, Hirosjima, Japan. pp. 170-173. IEEE Computer Society. ISBN 978-1-4244-6912-3
Li, Yuan and Donnet, D. and Grzegorczyk, A. and Cavelaars, J. and Kuper, F.G. (2010) Assessing the degradation mechanisms and current limitation design rules of SICR-based thin-film resistors in integrated circuits. In: Proceedings of the IEEE International Reliability Physics Symposium 2010 (IRPS), 2-6 May 2010, Anaheim, CA, USA. pp. 724-730. IEEE Computer Society. ISBN 978-1-4244-5430-3