EEMCS EPrints Service
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2006
Merticaru, A.R. and Mouthaan, A.J. and Kuper, F.G.
(2006)
Current Degradation of a-Si:H/SiN TFTs at Room Temperature and Low Voltages.
IEEE Transactions on Electron Devices, 53 (9).
pp. 2273-2279.
ISSN 0018-9383
*** ISI Impact 2,255 ***
Merticaru, A.R. and Mouthaan, A.J. and Kuper, F.G.
(2006)
Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages.
Journal of Non-Crystalline Solids, 352 (36-37).
pp. 3849-3853.
ISSN 0022-3093
*** ISI Impact 1,483 ***
2004
Merticaru, A.R.
(2004)
Electrical instability of a-Si:H/SiN thin film transistors : a study at room temperature and low voltage stress.
PhD thesis, University of Twente.
ISBN 90-365-2056-8
2003
Merticaru, A.R. and Mouthaan, A.J. and Kuper, F.G.
(2003)
Progressive degradation in a-Si: H/SiN thin film transistors.
Thin Solid Films, 427 (1-2).
60-66.
ISSN 0040-6090
*** ISI Impact 1,909 ***
2002
Golo-Tosic, N.
(2002)
Electrostatic discharge effects in thin film transistors.
PhD thesis, University of Twente.
ISBN 9036518091
Golo-Tosic, N. and Jenneboer, A.J.S.M. and Mouthaan, A.J.
(2002)
Dealing with electrostatic discharge in a capacitive fingerprint sensor fabricated in amorphous silicon thin film technology.
In: Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002, 29 Nov 2002, Veldhoven, The Netherlands.
pp. 616-621.
Technology Foundation STW.
ISBN 90-73461-33-2
Golo-Tosic, N. and Kuper, F.G. and Mouthaan, A.J.
(2002)
Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors.
IEEE transactions on electron devices, 49 (6).
pp. 1012-1018.
ISSN 0018-9383
*** ISI Impact 2,255 ***
Golo-Tosic, N. and Kuper, F.G. and Mouthaan, A.J.
(2002)
Zapping thin film transistors.
Microelectronics Reliability, 42 (4).
pp. 747-765.
ISSN 0026-2714
*** ISI Impact 1,066 ***
Golo-Tosic, N. and van der Wal, S. and Kuper, F.G. and Mouthaan, A.J.
(2002)
Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors.
Applied Physics Letters, 80 (18).
pp. 3337-3339.
ISSN 0003-6951
*** ISI Impact 3,820 ***
2001
Golo-Tosic, N. and van der Wal, S. and Kuper, F.G. and Mouthaan, A.J.
(2001)
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin film transistors.
Microelectronics Reliability, 41 (9-10).
pp. 1391-1396.
ISSN 0026-2714
*** ISI Impact 1,066 ***
Merticaru, A.R. and Mouthaan, A.J.
(2001)
Dynamics of metastable defects in a-Si:H/SiN TFTs.
Thin solid Films, 383 (1-2).
pp. 122-124.
ISSN 0040-6090
*** ISI Impact 1,909 ***
Merticaru, A.R. and Mouthaan, A.J. and Kuper, F.G.
(2001)
Study of dynamics of charge trapping in a-Si:H/SiN TFTs.
In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 29-30 Nov 2001, Veldhoven, The Netherlands.
pp. 109-114.
Technology Foundation STW.
ISBN 90-73461-29-4
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