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Research Project: Low temperature semiconductor device fabrication
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2011

Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. (2011) Negative Charge in Plasma Oxidized SiO2 Layers In: 219th ECS Meeting, 1 - 6 May 2011, Montreal QC, Canada. pp. 259-272. The Electrochemical Society. ISSN 1938-5862
Brunets, I. and Walters, R.J. and Kovalgin, A.Y. and Polman, A. and Schmitz, J. (2011) Realization of Silicon-Nanodots-Based CMOS Backend-Compatible Electrical SPP Source. In: 219th ECS Meeting, 1-6 May 2011, Montreal, QC, Canada. MA2011-01. Electrochemical Society . ISSN 2151-2043

2010

Walters, R. and Brunets, I. and Polman, A. and Schmitz, J. (2010) Integrated plasmonic nanocavity sensing device. Patent EP20100159175 (Application).
Walters, R.J. and van Loon, R.V.A. and Brunets, I. and Schmitz, J. and Polman, A. (2010) A silicon-based electrical source of surface plasmon polaritons. Nature materials, 9 (21-25). pp. 1-5. ISSN 1476-1122 *** ISI Impact 38,891 ***

2009

Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. (2009) Net Negative Charge in low-temperature SiO2 gate dielectric layers Microelectronic engineering, 86 (7-9). pp. 1707-1710. ISSN 0167-9317 *** ISI Impact 1,277 ***
Brunets, I. (2009) Electronic devices fabricated at CMOS backend-compatible temperatures. PhD thesis, University of Twente. ISBN 978-90-365-2935-8
Brunets, I. and Boogaard, A. and Smits, S.M. and de Vries, H. and Aarnink, A.A.I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2009) Low temperature TFTs with poly-stripes. In: Proceedings of the 5th International Thin Film Transistor Conference ITC'09, 5-6 Mar 2009, Palaiseau, France. pp. 62-65. Ecole Polytechnique. ISBN not assigned
Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Boogaard, A. and Schmitz, J. (2009) Low-temperature fabricated TFTs on polysilicon stripes. IEEE transactions on electron devices, 56 (8). pp. 1637-1644. ISSN 0018-9383 *** ISI Impact 2,207 ***
Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. (2009) Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling. ECS Transactions, 25 (8). pp. 23-32. ISSN 1938-5862
Kovalgin, A.Y. and Boogaard, A. and Wolters, R.A.M. (2009) Impact of small deviations in EEDF on silane-based plasma chemistry. ECS Transactions, 25 (8). pp. 429-436. ISSN 1938-5862
Walters, R.J. and van Loon, R.V.A. and Brunets, I. and Schmitz, J. and Polman, A. (2009) A silicon-based electrical source for surface plasmon polaritons. In: Proceedings of the 6th International Conference on GroupIV Photonics GFP'09, 9-11 Sept 2009, San Francisco, USA. pp. 74-76. IEEE Computer Society. ISBN 978-1-4244-4402-1

2008

Boogaard, A. and Roesthuis, R. and Brunets, I. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2008) Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 452-456. Technology Foundation STW. ISBN 978-90-73461-56-7
Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. In: Proceedings of the 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland. pp. 87-90. IOP Institute of Physics. ISBN 978-1-4244-2363-7
Brunets, I. and van Loon, R.V.A. and Walters, R.J. and Polman, A. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2008) Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 399-402. Technology Foundation STW. ISBN 978-90-73461-56-7
Kovalgin, A.Y. and Isai, I.G. and Holleman, J. and Schmitz, J. (2008) Low-temperature SiO2 layers deposited by combination of ECR plasma and supersonic silane/helium jet Journal of the Electrochemical Society, 155 (2). G21-G28. ISSN 0013-4651 *** ISI Impact 3,014 ***
Walters, R.J. and van Loon, R.V.A. and Polman, A. and Brunets, I. and Piccolo, G. and Schmitz, J. (2008) Luminescence properties of silicon nanocrystals in Al2O3 fabricated at low temperature In: 5th IEEE International Conference on Group IV Photonics, 2008, 17-19 Sept 2008, Sorrento, Italy. pp. 41-42. IEEE Computer Society. ISBN 978-1-4244-1768-1

2007

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2007) Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD Surface & coatings technology, 201. pp. 8976-8980. ISSN 0257-8972 *** ISI Impact 2,139 ***
Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) On the verification of EEDFs in plasmas with silane using optical emission spectroscopy. ECS Transactions, 6 (1). pp. 259-270. ISSN 1938-5862
Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD In: Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 29 - 30 Nov 2007, Veldhoven, The Netherlands. pp. 404-407. Technology Foundation STW. ISBN 978-90-73461-49-9
Brunets, I. and Aarnink, A.A.I. and Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices. Surface & Coatings Technology, 201. pp. 9209-9214. ISSN 0257-8972 *** ISI Impact 2,139 ***
Brunets, I. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature process steps for realization of non-volatile memory devices. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 504-508. Technology Foundation STW. ISBN 978-90-73461-49-9
Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Chemical modeling of a high-density inductively-coupled plasma reactor containing silane. Surface & Coatings Technology, 201. pp. 8849-8853. ISSN 0257-8972 *** ISI Impact 2,139 ***

2006

Boogaard, A. and Kovalgin, A.Y. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Brunets, I. and Schmitz, J. (2006) Langmuir-probe characterization of an inductively-coupled remote plasma system intended for CVD and ALD. ECS Transactions, 2 (7). pp. 181-191. ISSN 1938-5862
Boogaard, A. and Kovalgin, A.Y. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Brunets, I. and Schmitz, J. (2006) Measurement of electron temperatures of Argon Plasmas in a High-Density Inductively-Coupled Remote Plasma System by Langmuir Probe and Optical-Emission Spectroscopy. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands. pp. 412-418. Technology Foundation STW. ISBN 978-90-73461-44-4
Brunets, I. and van Hemert, T. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2006) Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands. pp. 419-422. Technology Foundation STW. ISBN 978-90-73461-44-4
Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Aarnink, A.A.I. and Boogaard, A. and Oesterlin, P. and Schmitz, J. (2006) Green laser crystallization of α-Si films using preformed α-Si Lines. In: Proceedings of the 210th Electrochemical Society meeting, 29 okt - 03 nov 2006, Cancun. Mexico. pp. 185-191. ECS Transactions 3, 8 (2006). ECS. ISBN 1-56677-508-6
Kovalgin, A.Y. and Holleman, J. (2006) Low-Temperature LPCVD of Polycrystalline GexSi1-x Films with High Germanium Content Journal of the Electrochemical Society, 153 (5). G363-G371. ISSN 0013-4651 *** ISI Impact 3,014 ***

2005

Aarnink, A.A.I. and Boogaard, A. and Brunets, I. and Isai, I.G. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2005) A high-density inductively-coupled remote plasma system for the deposition of dielectrics and semiconductors. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands. pp. 67-69. Technology Foundation STW. ISBN 90-73461-50-2
Brunets, I. and Boogaard, A. and Isai, I.G. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2005) Three-dimensional IC's prolong the life of Moore's law. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands. pp. 76-78. Technology Foundation STW. ISBN 90-73461-50-2