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Research Project: Growth and characterisation of single crystal Si
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2004

Isai, I.G. and Holleman, J. and Wallinga, H. and Woerlee, P.H. (2004) Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology B, 22 (3). pp. 1022-1029. ISSN 1071-1023 *** ISI Impact 1,27 ***
Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2004) Low hydrogen content silicon nitride films deposited at room temperature with a multipolar ECR plasma source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651 *** ISI Impact 2,59 ***

2003

Isai, I.G. (2003) ECR plasma deposited SiO2 and Si3N4 layers: a room temperature technology PhD thesis, University of Twente. ISBN 90-365-1934-9

2002

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 39-41. Technology Foundation STW. ISBN 90-73461-33-2

2001

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2001) Electronic conduction processes in SiO2 films obtained by ECR PECVD In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands. pp. 76-81. Technology Foundation STW. ISBN 90-73461-29-4