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Research Project: Growth and characterisation of single crystal Si

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2004

Isai, I.G. and Holleman, J. and Wallinga, H. and Woerlee, P.H. (2004) Conduction and trapping mechanisms in SiO₂ films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology B, 22 (3). pp. 1022-1029. ISSN 1071-1023 *** ISI Impact 1,268 ***

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2004) Low hydrogen content silicon nitride films deposited at room temperature with a multipolar ECR plasma source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651 *** ISI Impact 2,420 ***

2003

Isai, I.G. (2003) ECR plasma deposited SiO₂ and Si₃N₄ layers: a room temperature technology PhD thesis, University of Twente. ISBN 90-365-1934-9

2002

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 39-41. Technology Foundation STW. ISBN 90-73461-33-2

2001

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2001) Electronic conduction processes in SiO₂ films obtained by ECR PECVD In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands. pp. 76-81. Technology Foundation STW. ISBN 90-73461-29-4