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Research Project: Compact modeling: Thin Silicon Modeling

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2011

van der Steen, J-L.P.J. (2011) Geometrical scaling effects on carrier transport in ultrthin-body MOSFETs. PhD thesis, University of Twente. ISBN 978-90-365-3158-0

2010

van der Steen, J-L.P.J. and Palestri, P. and Esseni, D. and Hueting, R.J.E. (2010) A new model for the backscatter coefficient in nanoscale MOSFETs. In: Proceedings of the 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain. pp. 234-237. IEEE Solid-State Circuits Society. ISBN 978-1-4244-6660-3

2009

van Rossem, F. (2009) Doping extraction in FinFETs. Master's thesis, University of Twente.

Scholten, A.J. and Smit, G.D.J. and Pijper, R.M.T. and Tiemijer, L.F. and Tuinhout, H.P. and van der Steen, J-L.P.J. and Mercha, A. and Braccioli, M. and Klaassen, D.B.M. (2009) Experimental assessment of self-heating in SOI FinFETs. In: Proceedings of the 2009 International Electron Device Meeting, 5-11 Dec 2009, Baltimore, USA. pp. 305-308. IEEE Computer Society. ISBN 978-1-4244-5640-6

2008

van der Steen, J-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2008) Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. In: Proceedings of the 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland. pp. 242-245. IOP Institute of Physics. ISBN 978-1-4244-2363-7

van der Steen, J-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2008) Energy band offset extraction - a comparative study. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 592-595. Technology Foundation STW. ISBN 978-90-73461-56-7

2007

van der Steen, J-L.P.J. and Esseni, D. and Palestri, P. and Selmi, L. and Hueting, R.J.E. (2007) Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations. IEEE transactions on electron devices, 54 (8). pp. 1843-1851. ISSN 0018-9383 *** ISI Impact 2,255 ***

van der Steen, J-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs. IEEE electron device letters, 28 (9). pp. 821-824. ISSN 0741-3106 *** ISI Impact 2,714 ***

van der Steen, J-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 460-464. Technology Foundation STW. ISBN 978-90-73461-49-9

2006

Hueting, R.J.E. and Heringa, A. (2006) Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs. IEEE Transactions on Electron Devices, 53 (7). pp. 1641-1646. ISSN 0018-9383 *** ISI Impact 2,255 ***

van der Steen, J-L.P.J. (2006) Investigation of the band gap widening effect in thin silicon double gate MOSFETs. Master's thesis, University of Twente.

van der Steen, J-L.P.J. and Esseni, D. and Palestri, P. and Selmi, L. (2006) Validity of the Effective Mass Approximation in Silicon and Germanium Inversion Layers. In: Proceedings of International Workshop on Computational Electronics (nr. 11) IWCE, 25-27 May 2006, Vienna, Austria. pp. 301-302. ICWE. ISBN 3-901578-16-1