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Research Project: Barrier Layers for Copper Metallisation 2
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2005

Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic layer deposition of W1.5N barrier films for Cu Metallization Journal of The Electrochemical Society, 152 (7). G522-527. ISSN 0013-4651 *** ISI Impact 3,014 ***
Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA. pp. 769-774. Materials Research Society. ISBN 978-15589-9814-8

2004

Bystrova, S. (2004) Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties. PhD thesis, University of Twente. ISBN 90-365-2114-9

2003

Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2 In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 730-734. Technology Foundation STW. ISBN 90-73461-39-1

2002

Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterisation of Ta-based barrier films on SiLK for Cu-metalisation. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 9-13. Technology Foundation STW. ISBN 90-73461-33-2

2001

Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317 *** ISI Impact 1,277 ***