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Author: van Berkum, J.G.M.
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2001

Mannino, G. and Stolk, P.A. and Cowern, N.E.B. and de Boer, W. and Dirks, A.G. and Roozeboom, F. and van Berkum, J.G.M. and Woerlee, P.H. and Toan, N.N. (2001) Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. Applied physics letters, 78 (7). pp. 889-891. ISSN 0003-6951 *** ISI Impact 3,820 ***