EEMCS

Tiemeijer, L.F. and Havens, R.J. and de Kort, R. and Scholten, A.J. and van Langevelde, R. and Klaassen, D.B.M. and Sasse, G.T. and Bouttement, Y. and Petot, C. and Bardy, S. and Gloria, D. and Scheer, P. and Boret, S. and van Haaren, B. and Clement, C. and Larchanche, J-F. and Lim, I-S. and Duvallet, A. and Zlotnicka, A. (2005) Record RF performance of standard 90 nm CMOS technology. In: IEEE International Electron Devices Meeting 2004, 13-15 December 2004, San Francisco, California, USA. pp. 441-444. IEEE Computer Society. ISBN 0780386841

Sasse, G.T. and de Kort, R. and Schmitz, J. (2004) Gate-capacitance extraction from RF C-V measurements. In: The 34th European Solid-State Device Research conference, 2004, 21-23 September 2004, Leuven, Belgium. pp. 113-116. IEEE Computer Society. ISBN 0780384784

Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and de Kort, R. and Scholten, A.J. and Tiemeijer, L.F. (2004) Test structures design considerations for RF-CV measurements on leaky dielectrics. IEEE transactions on semiconductor manufacturing, 17 (2). pp. 150-154. ISSN 0894-6507 *** ISI Impact 0,748 ***

Schmitz, J. and Cubaynes, F.N. and de Kort, R. and Havens, R.J. and Scholten, A.J. and Tiemeijer, L.F. (2004) The RF-CV method for characterization of leaky gate dielectrics. Microelectronic engineering, 72. pp. 149-153. ISSN 0167-9317 *** ISI Impact 1,569 ***

Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and de Kort, R. and Scholten, A.J. and Tiemeijer, L.F. (2003) RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric. IEEE Electron Device Letters, 24 (1). pp. 37-39. ISSN 0741-3106 *** ISI Impact 2,714 ***

Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and de Kort, R. and Scholten, A.J. and Tiemeijer, L.F. (2003) Test structure design considerations for RF-CV measurements on leaky dielectrics. In: International Conference on Microelectronic Test Structures, 2003, 17-20 March 2003, Monterey, California, USA. pp. 181-185. IEEE Computer Society. ISBN 0780376536