EEMCS

Kazmi, S.N.R. and Aarnink, A.A.I. and Kovalgin, A.Y. and Salm, C. and Schmitz, J. (2011) Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS. ECS Transactions, 35 (30). pp. 45-52. ISSN 1938-5862

Kazmi, S.N.R. and Rangarajan, B. and Aarnink, A.A.I. and Salm, C. and Schmitz, J. (2010) Low Stressed In-situ Boron doped Poly SiGe Layers for High-Q Resonators. In: Proceedings of the STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands. pp. 109-113. Technology Foundation STW. ISBN 978-90-73461-67-3

Kazmi, S.N.R. and Salm, C. and Schmitz, J. (2009) Materials selection for low temperature processed high Q resonators using ashby approach. In: Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands. pp. 81-84. Technology Foundation STW. ISBN 978-90-73461-62-8

Kazmi, S.N.R. and Schmitz, J. (2008) Comparison of gate capacitance extraction methodologies. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 562-564. Technology Foundation STW. ISBN 978-90-73461-56-7