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Author: Hueting, R.J.E.
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2012

Puliyankot Palackavalapil, V. and Hueting, R.J.E. (2012) One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs. IEEE transactions on electron devices, 59 (1). pp. 26-34. ISSN 0018-9383 *** ISI Impact 2,255 ***

2011

van Hemert, T. and Kaleli, B. and Hueting, R.J.E. and Esseni, D. and van Dal, M.J.H. and Schmitz, J. (2011) Extracting the Conduction Band Offset in Strained FinFETs from Subthreshold-Current Measurements. In: Proceedings of the 41st European Solid-State Device Research Conference (Essderc 2011), 12-16 Sep 2011, Helsinki, Finland. pp. 275-278. IEEE Solid-State Circuits Society. ISBN 978-1-4577-0708-7
van Hemert, T. and Sakriotis, D. and Hueting, R.J.E. and Schmitz, J. (2011) Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitride. In: 24th International Conference on Microelectronic Test Structures, ICMTS 2011, 4-7 Apr 2011, Amsterdam. pp. 69-73. IEEE Electron Devices Society. ISSN 1071-9032 ISBN 978-1-4244-8527-7
Piccolo, G. and Puliyankot Palackavalapil, V. and Kovalgin, A.Y. and Hueting, R.J.E. and Heringa, A. and Schmitz, J. (2011) Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs. In: 2011 Proceedings of the 41st European Solid-State Device Research Conference (Essderc), 12-16 Sep 2011, Helsinki, Finland. pp. 175-178. IEEE Solid-State Circuits Society. ISBN 978-1-4577-0708-7
Puliyankot Palackavalapil, V. and Piccolo, G. and Hueting, R.J.E. and Heringa, A. and Kovalgin, A.Y. and Schmitz, J. (2011) Increased light emission by geometrical changes in Si LEDs. In: Proceedings of the 8th International Conference on Group IV Photonics (GFP), 14-16 Sep 2011, London, UK. pp. 287-289. IEEE Photonics Society. ISBN 978-1-4244-8340-2

2010

Boksteen, B.K. and Hueting, R.J.E. and Salm, C. and Schmitz, J. (2010) An Initial study on The Reliability of Power Semiconductor Devices. In: Proceedings of STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands. pp. 68-72. Technology Foundation STW. ISBN 978-90-73461-67-3
van Hemert, T. and Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2010) On the modelling and optimisation of a novel Schottky based silicon rectifier. In: Proceedings of the 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain. pp. 460-463. IEEE Solid-State Circuits Society. ISBN 978-1-4244-6660-3
Jose, S. and Hueting, R.J.E. and Jansman, A.B.M. (2010) Acoustic dispersion of solidly mounted resonators with an optimized reflector stack for dual wave reflection. In: Proceedings of the IEEE International Ultrasonics Symposium, IUS 2010, 11-14 Oct 2010, San Diego, CA. pp. 91-94. IEEE Ultrasonics, Ferroelectrics & Frequency Control Society. ISBN 978-1-4577-0382-9
Jose, S. and Jansman, A.B.M. and Hueting, R.J.E. and Schmitz, J. (2010) Optimized reflector stacks for solidly mounted bulk acoustic wave resonators. IEEE transactions on ultrasonics, ferroelectrics and frequency control, 57 (12). pp. 2753-2763. ISSN 0885-3010 *** ISI Impact 1,460 ***
Kaleli, B. and Aarnink, A.A.I. and Smits, S.M. and Hueting, R.J.E. and Wolters, R.A.M. and Schmitz, J. (2010) Electron Beam Lithography of HSQ and PMMA Resists and Importance of their Properties to Link the Nano World to the Micro World. In: Proceeding of STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands. pp. 105-108. Technology Foundation STW. ISBN 978-90-73461-67-3
Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and van Hemert, T. and Wolters, R.A.M. and Schmitz, J. (2010) Fabrication and characterization of the charge-plasma diode. IEEE electron device letters, 31 (6). pp. 528-530. ISSN 0741-3106 *** ISI Impact 2,714 ***
van der Steen, J-L.P.J. and Palestri, P. and Esseni, D. and Hueting, R.J.E. (2010) A new model for the backscatter coefficient in nanoscale MOSFETs. In: Proceedings of the 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain. pp. 234-237. IEEE Solid-State Circuits Society. ISBN 978-1-4244-6660-3
Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Mauczock, R. and Keur, W. and Hueting, R.J.E. (2010) BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substrates Thin solid films, 518 (10). pp. 2854-2959. ISSN 0040-6090 *** ISI Impact 1,909 ***

2009

Hueting, R.J.E. (2009) PNP with lateral Schottky emitter and Schottky collector. Patent WO2009066364 (Application).
Jose, S. and Jansman, A.B.M. and Hueting, R.J.E. (2009) Solidly Mounted Resonator with Optimized Acoustic Reflector. In: Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands. pp. 159-162. Technology Foundation STW. ISBN 978-90-73461-62-8
Jose, S. and Jansman, A.B.M. and Hueting, R.J.E. (2009) A design procedure for an acoustic mirror providing dual reflection of longitudinal and shear waves in Solidly Mounted BAW Resonators (SMRs). In: Proceedings of the IEEE International Ultrasonics Symposium (IUS) 2009, 20-23 Sep 2009, Rome, Italy. pp. 2111-2114. IEEE Press. ISSN 1948-5719 ISBN 978-1-4244-4389-5
Puliyankot Palackavalapil, V. and Hueting, R.J.E. and Schmitz, J. (2009) An initial modelling and simulation study on the 1D Si-Based LED. In: Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands. pp. 170-173. Technology Foundation STW. ISBN 978-90-73461-62-8
Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Wolters, R.A.M. and Schmitz, J. (2009) Metal contacts to lowly doped Si and ultra thin SOI. In: Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands. pp. 103-104. Technology Foundation STW. ISBN 978-90-73461-62-8
van der Steen, J-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2009) Extracting energy band offsets on long-channel thin silicon-on-insulator MOSFETs. IEEE transactions on electron devices, 56 (9). pp. 1999-2007. ISSN 0018-9383 *** ISI Impact 2,255 ***
Tiggelman, M.P.J. and Reimann, K. and Van Rijs, F. and Schmitz, J. and Hueting, R.J.E. (2009) On the trade-off between quality factor and tuning ratio in tunable high-frequency capacitors. IEEE transactions on electron devices, 56 (9). pp. 2128-2136. ISSN 0018-9383 *** ISI Impact 2,255 ***

2008

Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2008) The charge plasma P-N diode. IEEE electron device letters, 29 (12). pp. 1367-1369. ISSN 0741-3106 *** ISI Impact 2,714 ***
Jose, S. and Hueting, R.J.E. and Jansman, A.B.M. (2008) Modelling of bulk acoustic wave resonators for microwave filters. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 558-561. Technology Foundation STW. ISBN 978-90-73461-56-7
Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and Hoang, Tù and Schmitz, J. (2008) Charge plasma diode - a novel device concept. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 576-579. Technology Foundation STW. ISBN 978-90-73461-56-7
Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, Tù and Schmitz, J. (2008) Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In: Proceedings of the 9th Conference on ULtimate Integration on Silicon, 12-14 Mar 2008, Udine, Italy. pp. 195-198. Electron Device Society. IEEE Computer Society. ISBN 978-1-4244-1730-8
Schmitz, J. and de Vries, R. and Salm, C. and Hoang, Tù and Hueting, R.J.E. and Holleman, J. (2008) On the switching speed of SOI LEDs. In: Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 23-25 Jan 2008, Cork, Ireland. pp. 101-102. Tyndall National Institute. ISBN not assigned
van der Steen, J-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2008) Extracting energy band offsets on Thin Silicon-On-Insulator MOSFETs. In: Proceedings of the 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland. pp. 242-245. IOP Institute of Physics. ISBN 978-1-4244-2363-7
van der Steen, J-L.P.J. and Hueting, R.J.E. and Schmitz, J. (2008) Energy band offset extraction - a comparative study. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 592-595. Technology Foundation STW. ISBN 978-90-73461-56-7
Tiggelman, M.P.J. and Reimann, K. and Liu, J. and Klee, M. and Keur, W. and Mauczock, R. and Schmitz, J. and Hueting, R.J.E. (2008) Identifying dielectric and resistive electrode losses in high-density capacitors at radio frequencies. In: Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures, 24-27 Mar 2008, Edinburgh, Schotland. pp. 190-195. IEEE Computer Society. ISBN 978-1-4244-1801-5
Tiggelman, M.P.J. and Reimann, K. and Liu, J. and Klee, M. and Mauczock, R. and Keur, W. and Schmitz, J. and Hueting, R.J.E. (2008) The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 506-508. Technology Foundation STW. ISBN 978-90-73461-56-7

2007

Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, Tù and van der Wiel, W.G. and Schmitz, J. (2007) Dimensional scaling effects on transport properties of p-i-n diodes. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 457-459. Technology Foundation STW. ISBN 978-90-73461-49-9
van der Steen, J-L.P.J. and Esseni, D. and Palestri, P. and Selmi, L. and Hueting, R.J.E. (2007) Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations. IEEE transactions on electron devices, 54 (8). pp. 1843-1851. ISSN 0018-9383 *** ISI Impact 2,255 ***
van der Steen, J-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs. IEEE electron device letters, 28 (9). pp. 821-824. ISSN 0741-3106 *** ISI Impact 2,714 ***
van der Steen, J-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 460-464. Technology Foundation STW. ISBN 978-90-73461-49-9
Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Schmitz, J. and Hueting, R.J.E. and Liu, J. and Furukawa, Y. and Mauczock, R. and Keur, W. (2007) Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 465-467. Technology Foundation STW. ISBN 978-90-73461-49-9

2006

Hueting, R.J.E. and Heringa, A. (2006) Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs. IEEE Transactions on Electron Devices, 53 (7). pp. 1641-1646. ISSN 0018-9383 *** ISI Impact 2,255 ***
Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Beelen, D. and Keur, W. and Schmitz, J. and Hueting, R.J.E. (2006) Electrical characterization of thin film ferroelectric capacitors. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands. pp. 439-443. Technology Foundation STW. ISBN 90-73461-44-8

2005

Hueting, R.J.E. and van der Toorn, R. (2005) Analysis of the Kirk effect in silicon-based bipolar transistors with a nonuniform collector profile. IEEE transactions on electron devices, 52 (11). pp. 2489-2495. ISSN 0018-9383 *** ISI Impact 2,255 ***