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Author: Holleman, J.

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2009

Arguirov, T. and Mchedlidze, T. and Kittler, M. and Reiche, M. and Wilhelm, T. and Hoang, Tù and Holleman, J. and Schmitz, J. (2009) Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence. Physica E, 41 (6). pp. 907-911. ISSN 1386-9477 *** ISI Impact 1,304 ***

Brunets, I. and Boogaard, A. and Smits, S.M. and de Vries, H. and Aarnink, A.A.I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2009) Low temperature TFTs with poly-stripes. In: Proceedings of the 5th International Thin Film Transistor Conference ITC'09, 5-6 Mar 2009, Palaiseau, France. pp. 62-65. Ecole Polytechnique. ISBN not assigned

Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Boogaard, A. and Schmitz, J. (2009) Low-temperature fabricated TFTs on polysilicon stripes. IEEE transactions on electron devices, 56 (8). pp. 1637-1644. ISSN 0018-9383 *** ISI Impact 2,255 ***

Rangarajan, B. and Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2009) TFTs as photodetectors for optical interconnects. In: Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands. pp. 52-54. Technology Foundation STW. ISBN 978-90-73461-62-8

2008

Boogaard, A. and Roesthuis, R. and Brunets, I. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2008) Deposition of High-Quality SiO₂ Insulating Films at Low Temperatures by means of Remote PECVD In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 452-456. Technology Foundation STW. ISBN 978-90-73461-56-7

Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. In: Proceedings of the 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland. pp. 87-90. IOP Institute of Physics. ISBN 978-1-4244-2363-7

Brunets, I. and van Loon, R.V.A. and Walters, R.J. and Polman, A. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2008) Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 399-402. Technology Foundation STW. ISBN 978-90-73461-56-7

Hoang, Tù and Holleman, J. and Schmitz, J. (2008) SOI LEDs with carrier confinement. In: Materials Science Forum. Trans Tech Publications, Switzerland, Stafa- Zurich, Switzerland, pp. 101-116. ISSN 1662-9752 ISBN 978-0-87849-358-6

Kovalgin, A.Y. and Isai, I.G. and Holleman, J. and Schmitz, J. (2008) Low-temperature SiO₂ layers deposited by combination of ECR plasma and supersonic silane/helium jet Journal of the Electrochemical Society, 155 (2). G21-G28. ISSN 0013-4651 *** ISI Impact 2,420 ***

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, Tù and Holleman, J. and Le Minh, Phuong and Schmitz, J. (2008) Engineering of dislocation-loops for light emission from silicon diodes. Solid State Phenomena, 131-133. pp. 303-308. ISSN 1012-0394

Piccolo, G. and Hoang, Tù and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Silicon LEDs with antifuse injection. In: 5th IEEE International Conference on Group IV Photonics, 2008, 17-19 Sept 2008, Sorrento, Italy. pp. 49-51. IEEE Computer Society. ISBN 978-1-4244-1768-1

Piccolo, G. and Hoang, Tù and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Antifuse injectors for SOI LEDs. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands. pp. 573-575. Technology Foundation STW. ISBN 978-90-73461-56-7

Schmitz, J. and de Vries, R. and Salm, C. and Hoang, Tù and Hueting, R.J.E. and Holleman, J. (2008) On the switching speed of SOI LEDs. In: Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 23-25 Jan 2008, Cork, Ireland. pp. 101-102. Tyndall National Institute. ISBN not assigned

2007

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2007) Characterization of SiO₂ films deposited at low temperature by means of remote ICPECVD Surface & coatings technology, 201. pp. 8976-8980. ISSN 0257-8972 *** ISI Impact 2,135 ***

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) On the verification of EEDFs in plasmas with silane using optical emission spectroscopy. ECS Transactions, 6 (1). pp. 259-270. ISSN 1938-5862

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Optical and Electrical Characterization of SiO₂ films deposited at low temperature by means of remote ICPECVD In: Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 29 - 30 Nov 2007, Veldhoven, The Netherlands. pp. 404-407. Technology Foundation STW. ISBN 978-90-73461-49-9

Brunets, I. and Aarnink, A.A.I. and Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices. Surface & Coatings Technology, 201. pp. 9209-9214. ISSN 0257-8972 *** ISI Impact 2,135 ***

Brunets, I. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature process steps for realization of non-volatile memory devices. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 504-508. Technology Foundation STW. ISBN 978-90-73461-49-9

Groenland, A.W. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2007) Simulation of a Nanolink Hot-Plate Device. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 581-583. Technology Foundation STW. ISBN 978-90-73461-49-9

Hoang, Tù and Holleman, J. and Le Minh, Phuong and Schmitz, J. and Mchedlidze, T. and Arguirov, T. and Kittler, M. (2007) Influence of dislocation loops on the near infrared light emission from silicon diodes. IEEE transactions on electron devices, 54 (8). pp. 1860-1866. ISSN 0018-9383 *** ISI Impact 2,255 ***

Hoang, Tù and Le Minh, Phuong and Holleman, J. and Schmitz, J. (2007) Strong efficiency improvement of SOI-LEDs through carrier confinement. IEEE electron device letters, 28 (5). pp. 383-385. ISSN 0741-3106 *** ISI Impact 2,714 ***

Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Chemical modeling of a high-density inductively-coupled plasma reactor containing silane. Surface & Coatings Technology, 201. pp. 8849-8853. ISSN 0257-8972 *** ISI Impact 2,135 ***

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2007) A pillar-shaped antifuse-based silicon chemical sensor and actuator. IEEE sensors journal, 7 (1). pp. 18-27. ISSN 1530-437X *** ISI Impact 1,471 ***

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect. Applied physics letters, 91 (20). 201113. ISSN 0003-6951 *** ISI Impact 3,820 ***

van der Steen, J-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs. IEEE electron device letters, 28 (9). pp. 821-824. ISSN 0741-3106 *** ISI Impact 2,714 ***

van der Steen, J-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, Tù and Holleman, J. and Schmitz, J. (2007) Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands. pp. 460-464. Technology Foundation STW. ISBN 978-90-73461-49-9

2006

Bankras, R.G. and Holleman, J. and Schmitz, J. and Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. (2006) In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. Chemical Vapor Deposition, 12 (5). pp. 275-280. ISSN 0948-1907 *** ISI Impact 1,804 ***

Boogaard, A. and Kovalgin, A.Y. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Brunets, I. and Schmitz, J. (2006) Langmuir-probe characterization of an inductively-coupled remote plasma system intended for CVD and ALD. ECS Transactions, 2 (7). pp. 181-191. ISSN 1938-5862

Boogaard, A. and Kovalgin, A.Y. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Brunets, I. and Schmitz, J. (2006) Measurement of electron temperatures of Argon Plasmas in a High-Density Inductively-Coupled Remote Plasma System by Langmuir Probe and Optical-Emission Spectroscopy. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands. pp. 412-418. Technology Foundation STW. ISBN 978-90-73461-44-4

Brunets, I. and van Hemert, T. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2006) Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands. pp. 419-422. Technology Foundation STW. ISBN 978-90-73461-44-4

Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Aarnink, A.A.I. and Boogaard, A. and Oesterlin, P. and Schmitz, J. (2006) A green laser Crystallization of α-Si Films using preformed α-Si Lines. In: Proceedings of the 210th Electrochemical Society meeting, 29 okt - 03 nov 2006, Cancun. Mexico. pp. 185-191. ECS Transactions 3, 8 (2006). ECS. ISBN 1-56677-508-6

Hoang, Tù and Le Minh, Phuong and Holleman, J. and Schmitz, J. (2006) The effect of dislocation loops on the light emission of silicon LEDs. IEEE electron device letters, 27 (2). pp. 105-107. ISSN 0741-3106 *** ISI Impact 2,714 ***

Kovalgin, A.Y. and Holleman, J. (2006) Low-Temperature LPCVD of Polycrystalline Ge_xSi_1-x Films with High Germanium Content Journal of the Electrochemical Society, 153 (5). G363-G371. ISSN 0013-4651 *** ISI Impact 2,420 ***

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2006) A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption. In: Proceedings of the IEEE Sensors Conference, 30 Oct - 03 Nov 2005, Irvine, CA, USA. pp. 1225-1228. IEEE CNF. ISBN 0-7803-9056-3

Kovalgin, A.Y. and Holleman, J. and Iordache, G. and Jenneboer, A.J.S.M. and Falke, F. and Zieren, V. and Goossens, M.J. (2006) Low-power micro-scale CMOS-compatible silicon sensor on a suspended membrane. In: Microfabricated systems and MEMS VII: Proceedings of the 206th ECS Meeting, 2004, Honolulu, Hawaii. pp. 173-183. Electrochemical Society. ISBN 1-56677-422-5

Kovalgin, A.Y. and Holleman, J. and Iordache, G. and Jenneboer, A.J.S.M. and Falke, F. and Zieren, V. and Goossens, M.J. (2006) Low-Power, Antifuse-Based Silicon Chemical Sensor on a Suspended Membrane. Journal of the Electrochemical Society, 153 (9). H181-H188. ISSN 0013-4651 *** ISI Impact 2,420 ***

Le Minh, Phuong and Hoang, Tù and Holleman, J. and Schmitz, J. (2006) Influence of interface recombination in light emission from lateral Si-based light emitting devices. ECS Transactions, 3 (11). pp. 9-16. ISSN 1938-5862

Le Minh, Phuong and Holleman, J. (2006) Silicon light-emitting diode antifuse: properties and devices. Journal of physics D: applied physics, 39. pp. 3749-3754. ISSN 0022-3727 *** ISI Impact 2,105 ***

2005

Aarnink, A.A.I. and Boogaard, A. and Brunets, I. and Isai, I.G. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2005) A high-density inductively-coupled remote plasma system for the deposition of dielectrics and semiconductors. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands. pp. 67-69. Technology Foundation STW. ISBN 90-73461-50-2

Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) In-Situ RHEED analysis of atomic layer deposition. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands. pp. 70-75. Technology Foundation STW. ISBN 90-73461-50-2

Brunets, I. and Boogaard, A. and Isai, I.G. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2005) Three-dimensional IC's prolong the life of Moore's law. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands. pp. 76-78. Technology Foundation STW. ISBN 90-73461-50-2

Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic layer deposition of W_1.5N barrier films for Cu Metallization Journal of The Electrochemical Society, 152 (7). G522-527. ISSN 0013-4651 *** ISI Impact 2,420 ***

Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA. pp. 769-774. Materials Research Society. ISBN 978-15589-9814-8

Hoang, Tù and Le Minh, Phuong and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: Proceedings of 5th European Solid-State Device Research Conference (ESSDERC) 2005, 12-16 Sep 2005, Grenoble, France. pp. 359-362. IEEE Computer Society. ISBN 0-7803-9203-5

Hoang, Tù and Le Minh, Phuong and Holleman, J. and Zieren, V. and Goossens, M.J. and Schmitz, J. (2005) A high efficiency lateral light emitting device on SOI. In: 12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 8-9 November 2004, Berg-en-Dal, Kruger National Park, South Africa. pp. 87-91. IEEE Computer Society. ISBN 0780385748

Le Minh, Phuong and Hoang, Tù and Holleman, J. and Schmitz, J. (2005) The effect of an electric field on a lateral silicon light-emitting diode. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands. pp. 117-120. Technology Foundation STW. ISBN 90-73461-50-2

Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80. pp. 78-81. ISSN 0167-9317 *** ISI Impact 1,569 ***

Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Imaging of oxide charges and contact potential difference fluctuations in Atomic Layer Deposited Al₂O₃ on Si Journal of applied physics, 97. 063709. ISSN 0021-8979 *** ISI Impact 2,064 ***

Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties. Journal of Applied Physics, 98 (7). pp. 076104-1. ISSN 0021-8979 *** ISI Impact 2,064 ***

2004

Isai, I.G. and Holleman, J. and Wallinga, H. and Woerlee, P.H. (2004) Conduction and trapping mechanisms in SiO₂ films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology B, 22 (3). pp. 1022-1029. ISSN 1071-1023 *** ISI Impact 1,268 ***

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2004) Low hydrogen content silicon nitride films deposited at room temperature with a multipolar ECR plasma source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651 *** ISI Impact 2,420 ***

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2004) A micro-scale hot-surface device based on non-radiative carrier recombination. In: The 34th European Solid-State Device Research conference, 2004, 21-23 September 2004, Leuven, Belgium. pp. 353-356. IEEE Computer Society. ISBN 0780384784

2003

Bankras, R.G. and Aarnink, A.A.I. and Holleman, J. and Schmitz, J. (2003) In-situ RHEED analysis of atomic layer deposition and characterization of Al₂0₃ gate dielectrics In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 726-729. Technology Foundation STW. ISBN 90-73461-39-1

Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO₂ In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 730-734. Technology Foundation STW. ISBN 90-73461-39-1

Hoang, Tù and Le Minh, Phuong and Holleman, J. and Schmitz, J. and Wallinga, H. (2003) High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 610-613. Technology Foundation STW. ISBN 90-73461-39-1

Iordache, G. and Holleman, J. and Kovalgin, A.Y. and Jenneboer, A.J.S.M. (2003) Antifuse nano-hot-spot device on a suspended membrane for gas sensing applications. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands. pp. 693-696. Technology Foundation STW. ISBN 90-73461-39-1

Le Minh, Phuong and Holleman, J. and Wallinga, H. and Berenschot, J.W. and Tas, N.R. and van den Berg, A. (2003) Novel integration of a microchannel with a silicon light emitting diode antifuse. Journal of Micromechanics and Microengineering, 13 (3). pp. 425-429. ISSN 0960-1317 *** ISI Impact 2,276 ***

2002

Bankras, R.G. and Holleman, J. and Woerlee, P.H. (2002) Characterization of pulsed laser deposited Al₂O₃ gate dielectric In: Proceedings of the 5th annual workshop on semiconductors advances for future electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 1-4. Technology Foundation STW. ISBN 90-73461-33-2

Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterisation of Ta-based barrier films on SiLK for Cu-metalisation. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 9-13. Technology Foundation STW. ISBN 90-73461-33-2

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands. pp. 39-41. Technology Foundation STW. ISBN 90-73461-33-2

Kim, G.M. and Kovalgin, A.Y. and Holleman, J. and Brugger, J.P. (2002) Replication molds having nanometer-scale shape control fabricated by means of oxidation and etching. Journal of Nanoscience and Nanotechnology, 2 (1). pp. 55-59. ISSN 1533-4880 *** ISI Impact 1,351 ***

Kovalgin, A.Y. and Holleman, J. and van den Berg, A. (2002) Combined light/heat/gas sensor with decoupled electrical and thermal resistances. In: Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002, 29 November 2002, Veldhoven, The Netherlands. pp. 635-648. Technology Foundation STW. ISBN 90-73461-33-2

Kovalgin, A.Y. and Holleman, J. and van den Berg, A. (2002) A novel approach to low-power hot-surface devices with decoupled electrical and thermal resistances. In: Proceedings of Eurosensors 2002, 15-18 Sep 2002, Czech Technical University, Prague, Czech Republi. pp. 88-91. Czech Technical University. ISBN 80-01-02576-4

Le Minh, Phuong and Holleman, J. and Berenschot, J.W. and Tas, N.R. and van den Berg, A. (2002) Integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector. In: Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2002, 29 November 2002, Veldhoven, The Netherlands. pp. 644-648. Technology Foundation STW. ISBN 90-73461-33-2

Le Minh, Phuong and Holleman, J. and Berenschot, J.W. and Tas, N.R. and van den Berg, A. (2002) Monolithic integration of a novel microfluidic device with silicon light emitting diode-antifuse and photodetector. In: Proceedings of the 32nd European Solid-State Device Research Conference ESSDERC 2002, 24-26 September 2002, Florence, Italy. pp. 451-454. IEEE Computer Society. ISBN 88-900847-8-2

Le Minh, Phuong and Holleman, J. and Wallinga, H. (2002) Highly efficient silicon light emitting diode. In: SAFE 2002, Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics, 27-28 November 2002, Veldhoven, The Netherlands. pp. 46-50. Technology Foundation STW. ISBN 90-73461-33-2

2001

Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317 *** ISI Impact 1,569 ***

Hof, A.J. and Holleman, J. and Woerlee, P.H. (2001) Gate current for p+-poly PMOS devices under gate injection conditions. In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 28-30 Nov 2001, Veldhoven, The Netherlands. pp. 72-75. Technology Foundation STW. ISBN 90-73461-29-4

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2001) Electronic conduction processes in SiO₂ films obtained by ECR PECVD In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands. pp. 76-81. Technology Foundation STW. ISBN 90-73461-29-4

Kovalgin, A.Y. and Holleman, J. (2001) A study of morphology and texture of LPCVD germanium-silicon films. Journal de physique. IV, 11. Pr3-47-Pr3-54. ISSN 1155-4339

Kovalgin, A.Y. and Holleman, J. and van den Berg, A. and Wallinga, H. (2001) Thin-film antifuses for pellistor type gas sensors. In: Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001, 30 Nov 2001, Veldhoven, The Netherlands. pp. 809-812. Technology Foundation STW. ISBN 90-73461-29-4

Kovalgin, A.Y. and Holleman, J. and Salm, C. and Woerlee, P.H. (2001) Low-Pressure CVD of Germanium-Silicon films using Silane and Germane sources. In: Thin Film Transistors Technologies V, 23-25 Oct 2000, Phoenix, Arizona, USA. pp. 269-275. Electrochemical Society. ISBN 1566772982