EEMCS

van Hemert, T. and Kaleli, B. and Hueting, R.J.E. and Esseni, D. and van Dal, M.J.H. and Schmitz, J. (2011) Extracting the Conduction Band Offset in Strained FinFETs from Subthreshold-Current Measurements. In: Proceedings of the 41st European Solid-State Device Research Conference (Essderc 2011), 12-16 Sep 2011, Helsinki, Finland. pp. 275-278. IEEE Solid-State Circuits Society. ISBN 978-1-4577-0708-7

van der Steen, J-L.P.J. and Palestri, P. and Esseni, D. and Hueting, R.J.E. (2010) A new model for the backscatter coefficient in nanoscale MOSFETs. In: Proceedings of the 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain. pp. 234-237. IEEE Solid-State Circuits Society. ISBN 978-1-4244-6660-3

van der Steen, J-L.P.J. and Esseni, D. and Palestri, P. and Selmi, L. and Hueting, R.J.E. (2007) Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations. IEEE transactions on electron devices, 54 (8). pp. 1843-1851. ISSN 0018-9383 *** ISI Impact 2,255 ***

van der Steen, J-L.P.J. and Esseni, D. and Palestri, P. and Selmi, L. (2006) Validity of the Effective Mass Approximation in Silicon and Germanium Inversion Layers. In: Proceedings of International Workshop on Computational Electronics (nr. 11) IWCE, 25-27 May 2006, Vienna, Austria. pp. 301-302. ICWE. ISBN 3-901578-16-1