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Author: Attenborough, K.
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2010

Oosthoek, J.L.M. and Kooi, B.J. and De Hosson, J.T.M. and Wolters, R.A.M. and Gravesteijn, D.J. and Attenborough, K. (2010) Growth rate determination through automated TEM image analysis: crystallization studies of doped SbTe phase-change thin films. Microscopy and Microanalysis, 16 (3). pp. 291-299. ISSN 1431-9276 *** ISI Impact 2,179 ***

2009

in 't Zandt, M.A.A. and Jedema, M.J. and Gravesteijn, D.J. and Attenborough, K. and Wolters, R.A.M. (2009) Doped SbTe phase change material in memory cells. (Invited) In: Proceedings of the International Materials Research Congress (IMRC 2009), 16-21 Aug 2009, Cancun, Mexico. Materials Research Society. ISBN not assigned

2008

Jedema, F.J. and in 't Zandt, M.A.A. and Wolters, R.A.M. and Tio Castro, D. and Hurkx, G.A.M. and Delhounge, R. and Gravesteijn, D.J. and Attenborough, K. (2008) Scaling properties of doped Sb2Te phase change line cells In: 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD, Ogura, Taku. pp. 43-45. IEEE. ISBN 978-1-4244-1547-2

2007

Castro, D.T. and Goux, L. and Hurkx, G.A.M. and Attenborough, K. and Delhounge, R. and Lisoni, J. and Jedema, F.J. and in 't Zandt, M.A.A. and Wolters, R.A.M. and Gravesteijn, D.J. and Verheijen, M. and Kaiser, M. and Weemaes, R.G.R. (2007) Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells. In: Proceedings of International Electron Devices Meeting (IEDM) 2007, 10-12 Dec. 2007, Washington, DC, USA. pp. 315-318. IEEE. ISBN 978-1-4244-1507-6