EEMCS

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Official URL: http://dx.doi.org/10.1016/j.tsf.2006.09.046

Abstract

Silicon oxynitride layers were grown from 2% and gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the relevant deposition parameters including radio frequency power, chamber pressure, total gas flow, substrate temperature and gas flow ratio. As a result, optimized layers could be produced over a wide index range (1.46–1.70) with good thickness uniformity and sufficiently high deposition rate. With a refraction index non-uniformity < 5 × a thickness non-uniformity could be obtained below 1% over a 70 × 70 mm2 area of a 100 mm wafer at a deposition rate > 50 nm/min. The material composition and the optical properties of the layers were characterized by spectroscopic ellipsometry, X-ray Photoelectron Spectroscopy, Fourier Transform Infrared spectroscopy and prism coupler techniques. A simple atomic valence model is found to describe the measured atomic concentrations for PECVD silicon oxynitride layers.

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