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Bradley, J.D.B. and Ay, F. and Wörhoff, K. and Pollnau, M. (2006) Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas In: Science and Technology of Dielectrics for Active and Passive Photonic Devices, 29 Oct - 3 Nov 2006, Cancun, Mexico. pp. 117-124. ECS Transactions 3 (11). The Electrochemical Society. ISBN 1-56677-515-9
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Official URL: http://dx.doi.org/10.1149/1.2392925
Reactive ion etching of yttrium oxide thin films was investigated using and inductively coupled plasmas. For all gas combinations, with the exception of , the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in , suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched films was the highest after etching in plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in .
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