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6908 Silicon light-emitting diode antifuse: properties and devices
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Le Minh, Phuong and Holleman, J. (2006) Silicon light-emitting diode antifuse: properties and devices. Journal of physics D: applied physics, 39. pp. 3749-3754. ISSN 0022-3727 *** ISI Impact 2,544 ***

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Official URL: http://dx.doi.org/10.1088/0022-3727/39/17/006

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Abstract

This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the
spectral emission, explaining the emitting mechanism of the device. An estimation of the antifuse’s internal power conversion efficiency reveals a reasonable value of at least 10−5. Photochemical effect on two types of
photoresists were carried out showing a clear impact of the emitted photons in the near ultraviolet range. The two integrated device prototypes, namely the opto-isolator which communicates optically and the microscale
opto-fluidic device which senses the difference in the refractive indices of liquids, indicate that the light-emitting diode antifuse has the potential for sensor and actuator applications.
(Some figures in this article are in colour only in the electronic version)

Item Type:Article
Research Group:EWI-SC: Semiconductor Components
Research Program:MESA-General
Research Project:HELIOS: High Efficiency LIght emission Out of Silicon
ID Code:6908
Status:Published
Deposited On:13 December 2006
Refereed:Yes
International:Yes
ISI Impact Factor:2,544
More Information:statisticsmetis

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