Hueting, R.J.E. and Heringa, A.
Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs.
IEEE Transactions on Electron Devices, 53 (7).
*** ISI Impact 2,318 ***
Full text available as:
Official URL: http://dx.doi.org/10.1109/TED.2006.876284
In this work, we analyzed the subthreshold current (ID) of pocket implanted MOSFETs using extensive device simulations
and experimental data.We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.
|Research Group:||EWI-SC: Semiconductor Components|
|Research Project:||Compact modeling: Thin Silicon Modeling|
|Deposited On:||13 December 2006|
|ISI Impact Factor:||2,318|
Export this item as:
To correct this item please ask your editor
Repository Staff Only: edit this item