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2788 Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs

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Hueting, R.J.E. and Heringa, A. (2006) Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs. IEEE Transactions on Electron Devices, 53 (7). pp. 1641-1646. ISSN 0018-9383 *** ISI Impact 2,318 ***

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Official URL: http://dx.doi.org/10.1109/TED.2006.876284

Abstract

In this work, we analyzed the subthreshold current (ID) of pocket implanted MOSFETs using extensive device simulations
and experimental data.We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.

Item Type:	Article
Research Group:	EWI-SC: Semiconductor Components
Research Program:	MESA-General
Research Project:	Compact modeling: Thin Silicon Modeling
ID Code:	2788
Status:	Published
Deposited On:	13 December 2006
Refereed:	Yes
International:	Yes
ISI Impact Factor:	2,318
More Information:	statistics metis

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