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26908 Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments
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Wan, Jinbo and Kerkhoff, H.G. (2016) Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments. IEEE Transactions on Nanotechnology, 15 (2). pp. 137-148. ISSN 1536-125X *** ISI Impact 1,702 ***

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A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.

Item Type:Article
Research Group:EWI-CAES: Computer Architecture for Embedded Systems
Research Program:CTIT-General
Research Project:IMMORTAL: Integrated Modelling, Fault Management, Verification and Reliable Design Environment for Cyber-Physical Systems
Uncontrolled Keywords:analog, CMOS, NBTI, reliability, reaction-diffusion
ID Code:26908
Deposited On:21 March 2016
ISI Impact Factor:1,702
More Information:statisticsmetis

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