Nederlands
Contact
Sitemap
Search
OrganisationEEMCS EPrints Service
 |
|
|
||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
||||||||||||||||||||||||||||||||||||
|
|
|
||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
||||||||||||||||||||||||||||||||||||
|
|
Nazeer, H. and Woldering, L.A. and Abelmann, L. and Nguyen, Minh Duc and Rijnders, A.J.H.M. and Elwenspoek, M.C.
(2011)
Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films.
Microelectronic engineering, 88 (8).
pp. 2345-2348.
ISSN 0167-9317
*** ISI Impact 1,569 ***
Full text available as:
Official URL: http://dx.doi.org/10.1016/j.mee.2011.01.028  AbstractThe Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.
Export this item as: To request a copy of the PDF please email us request copy To correct this item please ask your editor Repository Staff Only: edit this item |
|
|
||||||||||||||||||||||||||||||||||||
|
|
|
||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
||||||||||||||||||||||||||||||||||||
|
|
|
||||||||||||||||||||||||||||||||||||||
