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18149 A 1.2V 10μW NPN-Based Temperature Sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from -70°C to 125°C

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Sebastiano, F. and Breems, L.J. and Makinwa, K.A.A. and Drago, S. and Leenaerts, D.M.W. and Nauta, B. (2010) A 1.2V 10μW NPN-Based Temperature Sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from -70°C to 125°C. In: Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 2010 IEEE International, 7-11 Feb 2010, San Francisco. pp. 312-313. IEEE Press. ISSN 0193-6530 ISBN 978-1-4244-6033-5

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Official URL: http://dx.doi.org/10.1109/ISSCC.2010.5433895

Abstract

This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from –70°C to 125°C. This represents a 10-fold improvement in
accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize
processes [3,4]. The sensor draws 8.3μA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as
sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature trim.

Item Type:	Conference or Workshop Paper (Full Paper, Talk)
Research Group:	EWI-ICD: Integrated Circuit Design
Research Program:	CTIT-WiSe: Wireless and Sensor Systems
ID Code:	18149
Status:	Published
Deposited On:	21 July 2010
Refereed:	Yes
International:	Yes
More Information:	statistics metis

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