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Pollnau, M. and Bradley, J.D.B. and Agazzi, L. and Bernhardi, E.H. and Ay, F. and Wörhoff, K. and de Ridder, R.M.
(2009)
Al2O3:Er3+ as a new platform for active integrated optics
(Invited)
In: 11th International Conference on Transparent Optical Networks, ICTON '09, 28/06/2009-02/07/2009, Azores.
We.D2.1.
IEEE.
ISBN 978-1-4244-4825-8
Full text available as:
Official URL: http://dx.doi.org/10.1109/ICTON.2009.5185260  AbstractRecently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of >20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation
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