EEMCS EPrints Service
Van Hao, B. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Schmitz, J. (2009) Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. In: Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands. pp. 59-62. Technology Foundation STW. ISBN 978-90-73461-62-8
Full text available as:
Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.
Export this item as:
To request a copy of the PDF please email us request copy
To correct this item please ask your editor
Repository Staff Only: edit this item