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Le Minh, Phuong and Holleman, J. and Wallinga, H.
(2002)
Highly efficient silicon light emitting diode.
In: SAFE 2002, Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics, 27-28 November 2002, Veldhoven, The Netherlands.
pp. 46-50.
Technology Foundation STW.
ISBN 90-73461-33-2
Full text available as:
Official URL: http://purl.org/utwente/58150 AbstractIn this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.
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