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15580 The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress

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Sowariraj, M.S.B. and Salm, C. and Mouthaan, A.J. and Smedes, T. and Kuper, F.G. (2002) The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress. Microelectronics Reliability, 42 (9-11). pp. 1287-1292. ISSN 0026-2714 *** ISI Impact 1,167 ***

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Official URL: http://dx.doi.org/10.1016/S0026-2714(02)00136-1

Abstract

In this paper we present a systematic study on the effect of process and layout variation for grounded-gate NMOSTs and LVTSCRs in a 0.18

Item Type:	Article
Research Group:	EWI-SC: Semiconductor Components
Research Program:	MESA-General
Research Project:	ESD CDM protection Circuits
ID Code:	15580
Status:	Published
Deposited On:	16 July 2009
Refereed:	Yes
International:	Yes
ISI Impact Factor:	1,167
More Information:	statistics

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