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Bearda, T. and Woerlee, P.H. and Wallinga, H. and Heyns, M.M.
(2002)
Charge transport after hard breakdown in gate oxides.
Japanese Journal of Applied Physics, Special Issue: Solid State Devices & Materials Part 1, No. 4B, April 2002, 41 (4B).
pp. 2431-2436.
ISSN 0021-4922
*** ISI Impact 1,058 ***
Full text available as:
Official URL: http://dx.doi.org/10.1143/JJAP.41.2431 AbstractWe show measurement results and simulations of currentvoltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.
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