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Kovalgin, A.Y. and Hof, A.J. and Schmitz, J.
(2005)
An approach to modeling of silicon oxidation in a wet ultra-diluted ambient.
Microelectronic Engineering, 80.
pp. 432-435.
ISSN 0167-9317
*** ISI Impact 1,557 ***
Full text available as:
Official URL: http://dx.doi.org/10.1016/j.mee.2005.04.101 AbstractIn this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
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