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15357 Reliable low-cost fabrication of low-loss Al₂O₃:Er³⁺ waveguides with 5.4-dB optical gain

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Wörhoff, K. and Bradley, J.D.B. and Ay, F. and Geskus, D. and Blauwendraat, T.P. and Pollnau, M. (2009) Reliable low-cost fabrication of low-loss Al₂O₃:Er³⁺ waveguides with 5.4-dB optical gain IEEE journal of quantum electronics, 45 (5). pp. 454-461. ISSN 0018-9197 *** ISI Impact 2,477 ***

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Official URL: http://dx.doi.org/10.1109/JQE.2009.2013365

Abstract

A reliable and reproducible deposition process for the fabrication of $Al_2O_3$ waveguides with losses as low as 0.1 dB/cm has been developed. The thin films are grown at ~ 5 nm/min deposition rate and exhibit excellent thickness uniformity within 1% over 50times50 mm2 area and no detectable $OH^{-}$ incorporation. For applications of the $Al_2O_3$ films in compact, integrated optical devices, a high-quality channel waveguide fabrication process is utilized. Planar and channel propagation losses as low as 0.1 and 0.2 dB/cm, respectively, are demonstrated. For the development of active integrated optical functions, the implementation of rare-earth-ion doping is investigated by cosputtering of erbium during the $Al_2O_3$ layer growth. Dopant levels between 0.2-5times $1020 cm^{-3}$ are studied. At $Er^{3+}$ concentrations of interest for optical amplification, a lifetime of the 4I13/2 level as long as 7 ms is measured. Gain measurements over 6.4-cm propagation length in a 700-nm-thick $Al_2O_3:Er^{3+}$ channel waveguide result in net optical gain over a 41-nm-wide wavelength range between 1526-1567 nm with a maximum of 5.4 dB at 1533 nm

Item Type:	Article
Research Group:	EWI-IOMS: Integrated Optical MicroSystems
Research Program:	MESA-General
Research Project:	PI-OXIDE: Photonic integrated devices in activated amorphous and crystalline oxides
Uncontrolled Keywords:	Aluminium oxide, erbium, integrated optics, low-loss dielectric waveguide, optical amplifier, reactive cosputtering
ID Code:	15357
Status:	Published
Deposited On:	29 June 2009
Refereed:	Yes
International:	Yes
ISI Impact Factor:	2,477
More Information:	statistics metis

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