EEMCS
Home > Publications
Home University of Twente
Education
Research
Prospective Students
Jobs
Publications
Intranet (internal)
 
 Nederlands
 Contact
 Sitemap
 Search
 Organisation

EEMCS EPrints Service


14892 Er-doped aluminium oxide waveguide amplifiers
 Home Policy Brochure Browse Search User Area Contact Help

Pollnau, M. (2008) Er-doped aluminium oxide waveguide amplifiers. (Invited) In: Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser, 13-15 April 2008, Levico Terme - Trento - Italy. 14. University of Trento Italy and University of Amsterdam, Van der Waals Zeeman Institute. ISBN not assigned

Full text available as:

PDF
 - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
12 Kb
Exported to Metis

Abstract

Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].

Item Type:Conference or Workshop Paper (Abstract, Invited/Keynote Talk)
Research Group:EWI-IOMS: Integrated Optical MicroSystems
Research Program:MESA-General
Research Project:PI-OXIDE: Photonic integrated devices in activated amorphous and crystalline oxides
Additional Information:Invited Talk
ID Code:14892
Status:Published
Deposited On:23 January 2009
Refereed:No
International:Yes
More Information:statisticsmetis

Export this item as:

To correct this item please ask your editor

Repository Staff Only: edit this item