EEMCS EPrints Service
van Mullem, C.J. and Blom, F.R. and Fluitman, J.H.J. and Elwenspoek, M.C. (1991) Piezoelectrically driven silicon beam force sensor. Sensors and actuators A: Physical, 26 (1-3). pp. 379-383. ISSN 0924-4247 *** ISI Impact 1,802 ***
Full text available as:
Official URL: http://dx.doi.org/10.1016/0924-4247(91)87019-Y
A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.
Export this item as:
To correct this item please ask your editor
Repository Staff Only: edit this item