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13058 Comb capacitor structures for measurement of post-processed layers
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Roy, D. and Klootwijk, J.H. and Verhaegh, N.A.M. and Roosen, H.H.A.J. and Wolters, R.A.M. (2008) Comb capacitor structures for measurement of post-processed layers. In: Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures, 24-28 Mar 2008, Edinburgh, Schotland. pp. 205-209. IEEE Computer Society. ISBN 978-1-4244-1801-5

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Official URL: http://dx.doi.org/10.1109/ICMTS.2008.4509339

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Abstract

We present a simple comb capacitive measurement structure to monitor the properties of post-processed layers. These measurement structures are easily fabricated in a single step in the last metallization layer of a standard IC process, while the post-processing layer in this article is formed over these comb structures by spray coating. The capacitive coupling of the structure on the substrate is modeled based on the electric field distribution around the structure. The change in composition of this post-processed layer is analyzed in terms of measured capacitance values.

Item Type:Conference or Workshop Paper (Full Paper, Talk)
Research Group:EWI-SC: Semiconductor Components
Research Program:MESA-General
ID Code:13058
Status:Published
Deposited On:16 July 2008
Refereed:Yes
International:Yes
More Information:statisticsmetis

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