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10881 An inductorless wideband Balun-LNA in 65nm CMOS with balanced output
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Blaakmeer, S.C. and Klumperink, E.A.M. and Leenaerts, D.M.W. and Nauta, B. (2007) An inductorless wideband Balun-LNA in 65nm CMOS with balanced output. In: Proceedings of ESSCIRC, 11-13 Sept 2007, Munchen. pp. 364-367. IEEE Press. ISSN 1930-8833 ISBN 1-4244-1125-4

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Official URL: http://dx.doi.org/10.1109/ESSCIRC.2007.4430319

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Abstract

Abstract — An inductorless LNA with active balun is designed
for multi-standard radio applications between 100MHz and
6GHz. It exploits a combination of a common gate stage and a
common source stage with replica biasing to maximize balanced
operation. The NF is designed to be around 3dB by using the
noise canceling technique. Its best performance is achieved
between 300MHz to 3.5GHz with gain and phase errors below
0.3dB and ±2degrees, 15dB gain, S11<-14dB, IIP3 = 0dBm and
IIP2 higher than +20dBm at a total power consumption of 21mW.
The circuit is fabricated in a baseline 65nm CMOS process, with
an active area of only 0.01mm2. The circuit simultaneously
achieves impedance matching, noise canceling and a well
balanced output.

Item Type:Conference or Workshop Paper (Full Paper, Talk)
Research Group:EWI-ICD: Integrated Circuit Design
Research Program:CTIT-WiSe: Wireless and Sensor Systems
Research Project:Ultrawideband techniques in CMOS
ID Code:10881
Status:Published
Deposited On:11 January 2008
Refereed:Yes
International:Yes
More Information:statisticsmetis

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